tssmi-conduekoi tptoducta., ijno. 20 stern ave. springfield, new jersey 07081 u.s.a. thyristors silicon-controlled rectifiers . .. designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. ? glass-passivated junctions ? blocking voltage to 800 volts ? to-220 construction ? low thermal resistance, high heat dissipation and durability telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 mcr218 scrs 8 amperes rms 50 thru 800 volts ao- -o k maximum ratings (tj = 25c unless otherwise noted.) (to-220ab) rating peak repetitive forward and reverse voltageo) (tj=25to125c, gate open) mcr218-2 mcr218-3 MCR218-4 mcr218-6 mcr218-8 mcr2 18-10 forward current rms (all conduction angles) peak forward surge current (1/2 cycle, sine wave, 60 hz) circuit fusing considerations (t = 8.3 ms) forward peak gate power forward average gate power forward peak gate current operating junction temperature range storage temperature range symbol vdrm vrrm !t(rms) rrsivi |2t pgm pg(av) igm tj tstg value 50 100 200 400 600 800 8 80 26 5 0.5 2 -40 to +125 -40 to +150 unit volts amps amps a2s watts watt amps c c /i and vrrm for all types can be applied on a continuous basis. ratings apply forzero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftimished by nl semi-conductors is believed to be both accurate and reliable at th? time of going to press. however nj semi-conductors assumes no responsibility for uny errors or omissions discoveted in its use. ni semi-conductors encourages customers to verify that datasheets are current before plncing orders.
mcr218 series thermal characteristics characteristic thermal resistance, junction to case symbol rejc max 2 unit c/w electrical characteristics (tj = 25c unless otherwise noted.) characteristic peak forward or reverse blocking current (vak = rated vdrm or vrrm, gate open) tj = 25c tj = 125c peak on-state voltage(1 ) (ltm = 16apeak) gate trigger current (continuous dc) (vo = 12v, rl = 100 ohms) gate trigger voltage (continuous dc) (vd = 12v, rl = 100 ohms) (rated vdrm, ?l = 1000 ohms, tj = 125"c) holding current (anode voltage = 24 vdc, peak initiating on-state current = 0.5 a, 0.1 to 10 ms pulse, gate trigger source = 7 v, 20 ohms) critical rate-of-rise of off-state voltage (vp = rated vdrm, exponential waveform, gate open, tj = 125c) symbol idrm, irrm vtm igt vgt ih dv/dt win _ ? ? 0.2 ~ ? typ ? 1.5 10 ? 16 100 max 10 2 1.8 25 1.5 30 ? unit ha ma volts ma volts ma v/us 1. pulse test: pulse width = 1 ms, duty cycle ? 2%. figure 1 ? current derating uj o: 1 cl uj i < s => i 1234567 it(av), average on-state forward current (amps) figure 2 ? on-state power dissipation figure 3 ? normalized gate trigger current 2.0 1.5 1.0 0.9 0.7 0.5 0.4 03 x s. x ^ \. x, \. ^^ /d = 12vdc ^^ ^x ^ ^ 'x 1.0 2.0 3.0 4.0 5.0 6.0 7.0 i-t(av).avg' on-state current (amps) -60 -40 -20 0 20 40 60 80 100 tj, junction temperature ( c) 120 140
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